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宾夕法尼亚大学Talid R Sinno教授学术报告通知

发布时间:2018-05-16 浏览量:

应能动学院刘立军教授、李早阳副教授的邀请,美国宾夕法尼亚大学Talid R Sinno教授将于2018年5月17-25日来我校进行合作研究和学术交流,并做半导体晶体材料生长过程多尺度模拟相关的系列学术讲座,欢迎各位老师和同学参加交流。


学术报告1:Lattice Kinetic Monte Carlo Simulations of Void Evolution in Silicon

时间:5月18日(周五)下午15:00-17:00

地点:东三楼甲222热流科学报告厅(东汽报告厅)

联系人:刘立军教授(电话:13571802763)

报告摘要:

This presentation will describe the use of the lattice kinetic Monte Carlo (LKMC) method for simulating vacancy clustering phenomena in crystalline silicon. Emphasis will be placed on generating accurate LKMC simulations of void evolution at high temperature, where the morphology is complex, as well as when oxygen impurity is present. Finally, brief remarks will be presented on approaches for coarse-grained LKMC simulations.


学术报告2:Continuum Modeling of Defect Formation in Crystalline Silicon

时间:5月19日(周六)上午10:00-12:00

地点:东三楼甲222热流科学报告厅(东汽报告厅)

联系人:刘立军教授(电话:13571802763)

报告摘要:

This presentation will describe efforts in continuum modeling of defect transport and aggregation. First, native point defect phenomena are discussed with emphasis on the prediction of macroscopic features in CZ silicon ingots. The second part of the presentation is focused on the modeling of oxide precipitation in which both chemical and mechanical driving forces act simultaneously to generate defects.


学术报告3:Multiscale Modeling in Si-Ge Systems

时间:5月21日(周一)上午10:00-12:00

地点:东三楼甲222热流科学报告厅(东汽报告厅)

联系人:刘立军教授(电话:13571802763)

报告摘要:

This talk will focus on the modeling and simulation of two distinct phenomena related to the Si-Ge binary system. In the first, the deposition and evolution of Ge islands on amorphous SiO2 is discussed, which is relevant to the growth of epitaxial Ge films as virtual substrates on crystalline silicon. In the second part of the presentation, a combined experimental and computational study of stress-induced compositional patterning in SiGe solid-solution alloys is highlighted. Here, the ultimate aim is to generate, using a scalable and efficient process, quantum-barrier configurations (e.g., quantum dots) for optoelectronic applications.


讲座人介绍:

Talid R. Sinno教授于1998年获得美国麻省理工学院博士学位,现任美国宾夕法尼亚大学机械工程与应用科学系、化学与生物分子工程系教授。主要研究方向为:多尺度模拟,包括分子动力学、蒙特卡罗、有限元计算等;半导体材料生长;生物大分子聚合与结晶。在Nature Materials、Nature Communication、Physical Review Letter、Blood等期刊发表论文70余篇,合作出版学术著作3部。Sinno教授的研究工作在美国以及国际上获得了高度认可,1991年获得美国化学协会突出学术成就奖,2002年获得NSF CAREER奖。





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