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日本九州大学Nakano博士讲座通知
发布时间:2017-11-03 09:13:38 点击量:386

       应能动学院陈雪江副教授的邀请,日本九州大学应用力学研究所Nakano博士将来访我校并做专题学术报告,届时欢迎各位师生参与交流。

讲座名称:1. Numerical analysis of dislocation density in Si single crystal

          2. Numerical investigation of impurity concentration in multi-crystalline Si for solar cells

讲座时间:2017116日上午8:30

讲座地点:工程馆二楼 陕鼓讲习室

讲座内容:

Multi-crystalline silicon is an important material for solar cells because of its cost-effectiveness. However, multi-crystalline cells have a problem for the conversion efficiency of solar cells because many impurities incorporate into a silicon ingot during the solidification process. Dislocation density and residual stress are also serious problems for solar cells because dislocation density causes the reduction of the conversion efficiency of solar cells and residual stress causes the fracture of silicon ingot during the slicing process. It has been reported that dislocation densities rapidly increased during cooling process. Therefore, we have to optimize solidification and cooling process to decrease impurity concentration, dislocation density and residual stress in a silicon ingot. We investigated the behavior of impurity, dislocation and residual stress during the growth process for Si crystal using numerical analysis. And we applied our knowledge which obtain from our numerical results to experiment for Si crystal growth.

讲座人简介:

Satoshi Nakano,博士,日本九州大学应用力学研究所高级工程师。1996年获得日本鹿儿岛大学工学部电气电子工学科学士学位,1997年获得日本鹿儿岛大学院工学研究科硕士学位,2014年获得日本九州大学院工学研究科博士学位。现任研究所技术班长,主要从事单晶硅、多晶硅等晶体制备过程中的热场控制及晶体内缺陷控制机理的研究。Nakano博士所在的日本九州大学KAKIMOTO实验室在晶体生长方面的研究始终走在前列。近五年来,Nakano博士在晶体内部缺陷发展及杂质控制方面取得了较大的成果,共参与和主持了日本学术振兴会、NEDO等机构批准的7个晶体生长方面的研究项目,发表了近10篇的SCI论文,参加了数10次国际和国内会议。

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